tap crystal

Study on TAP Crystal in Crystallization States under Different Ranges of Temperature

邻苯二甲酸氢铊（TAP）晶体在不同温度区间结晶状态的研究

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The growth rate R of thallium acid phthalate ( TAP) crystal on each show-up faces in aqueous solution at 322.1 5 K has been determined by stationary stereoscopic microscope method. The relationship between R and σ has been obtained from the experimental data by computer.

采用静态体现显微法测量在饱和点为322.15K下水溶液中TAP晶体各显露面的生长速率R，然后将实验数据用电子计算机归纳出R与σ的关系。

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The mechanism of crystal growth was explored using BCF surface diffusion model. The results show that it is surface diffusion mechanism that plays a key role in the growing of TAP single crystal in aqueous solution.

用BCF面扩散模型对生长机理进行了探讨，认为TAP晶体的水溶液生长机制是面扩散起主导作用。

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